Samsung claims that its Flashbolt is the industry’s first third-generation 16-gigabyte (GB) High Bandwidth Memory-2E (HBM2E) memory chip delivering twice the capacity of its predecessor Aquabolt.
The Korean tech company said that with a new solution called Flashbolt, the firm upped the ante for fast data transmission speed and premium memory for big data.
The new Flashbolt contains twice the capacity of Aquabolt, a second-generation 8GB HBM2, sharply increasing performance and power efficiency. Flashbolt uniquely maximizes computing systems and help tech manufacturers to advance their AI-powered data analytics, supercomputers, and graphics systems.
To achieve the solution’s 16GB capacity, Samsung created eight layers of 10-nm class (1y) 16-gigabit (Gb) DRAM dies are stacked on top of a buffer chip offering a data transmission speed of 3.2-gigabits-per-second (Gbps) with 413-gigabytes-per-second (Gbps) data bandwidth per stack.
According to the company, Flashbolt can achieve a maximum of 4.2 Gbps in data transmission speed, allowing for a memory bandwidth of 538 Gbps per stack enough to transmit 82 full HD movies in one second.
Samsung’s latest achievement was realized in two years after it began mass-producing Aquabolt in January 2018.
The company now intends to kick off mass production of the new Flashbolt within the year to advance technological innovations to AI-based data analytics and high-performance computing (HPC).
Samsung Electronics’ executive vice president of memory sales & marketing, Choi Cheol, said Samsung would continue to deliver on its commitment to bring genuinely differentiated solutions as we reinforce our edge in the global memory marketplace.
He added that with the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market.