SK Hynix, the Korean memory chip giant, announced the completion of developing its fifth-generation DDR5 DRAM based on 10-nm process technology. The firm has entered the product validation phase in collaboration with U.S. chip giant Intel.
SK Hynix’s latest DDR5 DRAM memory chips, called 1bnm DDR5 DRAM chips, are now part of the Intel Data Center Certified memory program. Notably, this sample DDR5 strengthens its position as the industry’s fastest with a data transfer rate of 6.4 gigabits per second.
The newly developed DDR5 DRAM memory chips demonstrate a significant improvement, operating 33 percent faster than their predecessors during the early stages of DDR5 development.
One of the key factors contributing to this performance is the utilization of the High-K Metal Gate (HKMG) process. The technology enables the DDR5 DRAM to reduce power consumption by more than 20 percent compared to the previous generation, known as the fourth-generation DDR5 or 1anm DDR5.
According to the company official, the HKMG process is a next-generation technique that utilizes a high dielectric constant material in the DRAM transistor’s insulating film. It prevents current leakage, improves capacitance, and simultaneously reduces power consumption while increasing speed.
SK Hynix aims to deliver high-performance and energy-efficient DRAM products to its global customer base, meeting the demands of various applications with the development of this latest technology.
Intel’s Vice President of Memory and IO Technologies, Dr. Dimitrios Ziakas, acknowledged the collaboration between Intel and the memory industry to ensure DDR5 memory compatibility on the Intel Xeon Scalable platform. He highlighted the significance of SK Hynix’s 1bnm technology as the first of its kind targeted for the upcoming Intel Xeon Scalable platform, reinforcing its importance within the Intel Data Center Certified memory program.
Kim Jong-hwan, head of DRAM Development at SK Hynix, spoke to the media about the announcement. “SK Hynix expects the validation process of the 1bnm DDR5 product with Intel to go smoothly following a successful validation of our 1anm server DDR5 product compatibility with the 4th Gen Intel Xeon Scalable processors,” he stated.
Kim further expressed optimism, stating, “Amid growing expectations that the memory market will start to recover from the second half, we believe our industry-leading DRAM technology, proven again through mass production of the 1bnm process this time, will help us improve earnings from the second half,”
SK Hynix has also announced plans to utilize the advanced process technology in producing DRAMs, including LPDDR5T and HBME3E, commencing in the first half of the upcoming year.
Besides its ongoing product developments, SK Hynix is currently engaged in an additional validation process to integrate its fourth-generation DDR5 product into the forthcoming generation of the Intel Xeon Scalable platfor
